Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
interface de semi-conducteurs composés — skiriamasis puslaidininkinių junginių paviršius statusas T sritis radioelektronika atitikmenys: angl. compound semiconductor interface vok. Grenzfläche zwischen den Verbindungshalbleitern, f rus. поверхность раздела между полупроводниковыми… … Radioelektronikos terminų žodynas
Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most … Wikipedia
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Optical modulators using semiconductor nano-structures — Contents 1 Optical modulators using semiconductor nano structures 1.1 Electro optic modulator of nano structures 1.2 Acousto optic modulator of nano structures … Wikipedia
Grenzfläche zwischen den Verbindungshalbleitern — skiriamasis puslaidininkinių junginių paviršius statusas T sritis radioelektronika atitikmenys: angl. compound semiconductor interface vok. Grenzfläche zwischen den Verbindungshalbleitern, f rus. поверхность раздела между полупроводниковыми… … Radioelektronikos terminų žodynas
skiriamasis puslaidininkinių junginių paviršius — statusas T sritis radioelektronika atitikmenys: angl. compound semiconductor interface vok. Grenzfläche zwischen den Verbindungshalbleitern, f rus. поверхность раздела между полупроводниковыми соединениями, f pranc. interface de semi conducteurs… … Radioelektronikos terminų žodynas
поверхность раздела между полупроводниковыми соединениями — skiriamasis puslaidininkinių junginių paviršius statusas T sritis radioelektronika atitikmenys: angl. compound semiconductor interface vok. Grenzfläche zwischen den Verbindungshalbleitern, f rus. поверхность раздела между полупроводниковыми… … Radioelektronikos terminų žodynas
nanotechnology — /nan euh tek nol euh jee, nay neuh /, n. any technology on the scale of nanometers. [1987] * * * Manipulation of atoms, molecules, and materials to form structures on the scale of nanometres (billionths of a metre). These nanostructures typically … Universalium
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
